Category:Optoelectronics

I

• Image sensors‎ (5 C, 48 P)

L

• Lasers‎ (10 C, 19 P)
• Light-emitting diodes‎ (4 C, 44 P)

O

• Optical computer storage‎ (2 C, 36 P)
• Optical diodes‎ (2 C, 18 P)

P

• Photodetectors‎ (1 C, 19 P)
• Photovoltaics‎ (6 C, 111 P)

S

• Silicon photonics devices‎ (1 C, 3 P)

• Optoelectronics

0–9

• 3LCD

A

• ANS synthesizer
• Auston switch

C

• Carrier generation and recombination
• Cavity switch
• Color Light Output
• Corona poling

D

• Dark current (physics)
• Deep-level trap
• Diffractive solar sail
• Digital light processing
• Digital micromirror device
• Direct and indirect band gaps
• Optical disc drive

E

• Electro-optic modulator
• Electro-optical sensor
• Electro-optics

F

• Fiber-optic cable
• Field of regard
• Franz–Keldysh effect

G

• Gallium arsenide
• Germanane
• Grating light valve

H

• Heliatek
• High-field domain

I

• Indium phosphide
• Infrared open-path detector
• Interconnect bottleneck

J

• JORDY

L

• LBCAST
• LED art
• Light-addressable potentiometric sensor
• Light-emitting transistor
• Lin Xiangdi

M

• Micromirror device
• Microoptoelectromechanical systems

N

• Nanoneedle
• NOBLEX E-Optics GmbH

O

• OECC
• Optical disc
• Optical IP Switching
• Optical modulators using semiconductor nano-structures
• Optical storage
• Optical transistor
• Optimized power control
• Opto-isolator
• Optoelectronic plethysmography

P

• Pakistan-China Fiber Optic Project
• Petoscope
• Photo–Dember effect
• Photoinduced electron transfer
• Photonic curing
• Photonics mast
• Photovoltaics
• Piklington Optronics
• Position sensitive device

Q

• Quantum Cascade Detector

R

• Rainbow heterodyne detection
• Rank Prizes
• Reciprocity (optoelectronic)
• Resistive opto-isolator

S

• Gagik Shmavonyan
• Silicon photomultiplier
• Silicon quantum dot
• Slotted optical switch
• Small molecule sensors
• Superconducting nanowire single-photon detector

T

• Thermopile laser sensor
• Thunderbolt (interface)

V

• VEB Carl Zeiss Jena
• Vision chip

W

• Herbert Winful