Parasitic structure
 | This article includes a list of references, related reading, or external links, but its sources remain unclear because it lacks inline citations. (October 2016) |
In a semiconductor device, a parasitic structure is a portion of the device that resembles in structure some other, simpler semiconductor device, and causes the device to enter an unintended mode of operation when subjected to conditions outside of its normal range.[citation needed] For example, the internal structure of an NPN bipolar transistor resembles two P-N junction diodes connected together by a common anode. In normal operation the base-emitter junction does indeed form a diode, but in most cases it is undesirable for the base-collector junction to behave as a diode. If a sufficient forward bias is placed on this junction it will form a parasitic diode structure, and current will flow from base to collector.
A common parasitic structure is that of a silicon controlled rectifier (SCR). Once triggered, an SCR conducts for as long as there is a current, necessitating a complete power-down to reset the behavior of the device. This condition is known as latchup.[citation needed]
References
[edit]Further reading
[edit]- Panagopoulos, A. D. (2015). Handbook of Research on Next Generation Mobile Communication Systems. Advances in Wireless Technologies and Telecommunication. IGI Global. pp. 57–58. ISBN 978-1-4666-8733-2.
 | This electronics-related article is a stub. You can help Wikipedia by expanding it. |